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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E35A2CDS, E35A2CDR STACK SILICON DIFFUSED DIODE F E FEATURES Average Forward Current : IO=35A. Reverse Voltage : 200V(Min) POLARITY E35A2CDS (+ Type) E35A2CDR (- Type) G L1 B A MAXIMUM RATING (Ta=25 CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Revese Voltage Junction Temperature Storage Temperature Range ) SYMBOL IF(AV) IFSM VRRM Tj Tstg RATING 35 350 (60Hz) 200 -40 200 -40 200 UNIT A A V DIM MILLIMETERS DIM MILLIMETERS _ _ A 9.5 + 0.2 E 3.1+ 0.1 _ F 1.5 B 8.4 + 0.2 G R0.5 C 1.2 _ L1 5 + 0.4 D 1 DIM TYPE POLARITY S L2 R MILLIMETERS _ 19.0 + 1.0 _ 23.0 + 1.0 PD ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Voltage Reverse Current Reverse Recovery Time Reverse Leakage Current Under High Temperature Temperature Resistance ) TEST CONDITION IFM=100A IR=5mA VR=200V IF=0.1A, IR=0.1A Ta=150 , VR=200v DC total Junction to case MIN. 200 TYP. 0.8 MAX. 1.05 50 15 2.5 UNIT V V A S mA /W VF SYMBOL VR IR trr HIR Rth 2002. 10. 9 Revision No : 1 C D L2 1/1 |
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